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Photoelectric Characteristics of a-Si:H Thin Film Transistor by Spectral Properties of Various Backlight Sources

机译:A-Si:H薄膜晶体管的光电特性通过各种背光源的光谱特性

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摘要

Photo leakage characteristics of a-Si:H TFT were obtained for the illuminations from various backlight sources and the results were compared and analyzed in terms of the photoelectric properties of light. The analysis shows that the photocurrents are related to the wavelengths of the peak intensities of the spectrums of light sources.
机译:从各种背光源的照明获得A-Si:H TFT的照片泄漏特性,并在光的光电性能方面进行比较和分析结果。该分析表明,光电流与光源光谱的峰值强度的波长有关。

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