首页> 外文会议>IMID/IDMC/ASIA DISPLAY 2008;International display manufacturing conference 2008;International meeting on information display;Asia display 2008 >Photoelectric Characteristics of a-Si:H Thin Film Transistor by Spectral Properties of Various Backlight Sources
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Photoelectric Characteristics of a-Si:H Thin Film Transistor by Spectral Properties of Various Backlight Sources

机译:各种背光源的光谱特性研究a-Si:H薄膜晶体管的光电特性

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摘要

Photo leakage characteristics of a-Si:H TFT were obtained for the illuminations from various backlight sources and the results were compared and analyzed in terms of the photoelectric properties of light. The analysis shows that the photocurrents are related to the wavelengths of the peak intensities of the spectrums of light sources.
机译:对于各种背光源的照明,获得了a-Si:H TFT的光泄漏特性,并根据光的光电特性对结果进行了比较和分析。分析表明,光电流与光源光谱的峰值强度的波长有关。

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