Analysis of power devices breakdown behaviour by ion beam and electron beam induced charge microscopy

摘要

The development of appropriate edge termination structures is a challenging task for all kinds of different vertical power semiconductors such as high-voltage diodes, IGBTs or especially compensation devices. Ion-beam induced charge microscopy and electron-beam induced charge microscopy are reliable tools for imaging of space-charge regions and detection of electric-field enhancements inside of power devices. The usefulness of these methods is shown for the example of high-voltage power diodes and low-voltage power MOSFET. Advantages and limitations of the measurement techniques are discussed.