Charge carrier recombination and generation analysis in materials and devices by electron and optical beam microscopy

摘要

Electron beam induced current (EBIC) and optical beam induced current (OBIC) methods of scanning microscopy are here described in view of their applications in the analysis of recombination and generation of carriers in devices and materials. These analyses allow to evidence peculiarities in the charge carriers transport and/or failure in devices charge collection, measuring electrical parameters in the micrometer range, such as potential distribution within the sample, diffusion length and surface recombination velocity. This review will illustrate some case studies relevant to devices and material investigations in the two geometrical configurations: normal and planar. Literature results are reviewed in order to show capabilities and effectiveness of these methods in the investigation of the defect electrical activity and resulting localized minority carrier recombination and generation in devices under operating conditions, as well as in native semiconductor materials such as silicon, gallium arsenide and gallium nitride.