MOVPE growth and investigation of AIInN/AIN multiple quantum wells

摘要

We report about the MOVPE growth and characterisation of A1_(0.90)In_(0.10)N single layers and multiple quantum well structures (MQW) containing 8 periods of A1_(0.90)In_(0.10)N/AIN quantum wells. All samples show good quality in high-resolution X-ray diffractometry (HRXRD) evaluation, superlattice fringes up to the 2~(nd) order can be seen for the MQW sample. In optical transmission experiments, an absorption edge for the A1_(0.90)In_(0.10)Nsingle layer is detected at 4.9 eV. Due to the low intensity of emission and limited sensitivity of our setup in this spectral region, photoluminescence (PL) emission above 4 eV is only visible for the MQW sample. Both PL and cathodoluminescence (CL) measurements show an emission peak at longer wavelength for the Al_(0.90)In_(0.10)N/AIN MQW sample. When increasing the excitation current density in CL, the emission at lower wavelength is clearly enhanced, while it is slightly reduced at higher wavelength. We believe this to be a saturation effect of a defect-related emission.