Gate-first integration of Gd-based high-k dielectrics with metal gate electrodes

机译：金属栅电极GD基高k电介质的栅极第一集成

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In this work we present a gate-first process platform for device integration of gadolinium (Gd) based high-k dielectrics and metal gate electrodes. Epitaxial Gd_2O_3 and GdSiO high-k layers have been integrated with titanium nitride (TiN) gates. Thermal stability of the gate stacks is investigated in detail. Especially the metal inserted polysilicon approach using TiN enables high temperature processing.

机译：在这项工作中，我们为基于钆（GD）的高k电介质和金属栅电极的设备集成提供了一个门 - 第一工艺平台。外延GD_2O_3和GDSIO高k层已与氮化钛（锡）栅极集成。详细研究了栅极堆的热稳定性。特别是使用锡的金属插入的多晶硅方法能够实现高温处理。

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《International Conference on Signals, Circuits and Systems》|2009年||共4页
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H. D. B. Gottlob; M. Schmidt; H. Kurz;
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中图分类 TN911-53;
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High-k dielectric; Metal gate electrode; Gate-first integration; Gd_2O_3; GdSiO; Thermal stability; Electron mobility;

机译：高k电介质;金属栅电极;栅极 - 首先集成;gd_2o_3;gdsio;热稳定性;电子移动性;

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专利

1. Thickness and material dependence of capping layers on flatband voltage (V_(FB)) and equivalent oxide thickness (EOT) with high-k gate dielectric/metal gate stack for gate-first process applications [J] . Changhwan Choi Microelectronic Engineering . 2012,第Jana期

机译：采用高k栅极电介质/金属栅极堆叠的覆盖层的厚度和材料对平坦带电压（V_（FB））和等效氧化物厚度（EOT）的依赖性，适用于先栅工艺应用
2. Integrating high-k /metal gates: gate-first or gate-last? [J] . Thomas Y. Hoffmann Solid state technology . 2010,第3期

机译：集成高k /金属栅极：先栅极还是后栅极？
3. Improved Gate-Edge Profile of Metal/High-k Gate Stack Using an NH_3 Ashing Process in Gate-First CMOSFETs [J] . S. C. Song, Z. Zhang, C. Huffman Electrochemical and solid-state letters . 2006,第1期

机译：在栅极优先的CMOSFET中使用NH_3灰化工艺改善了金属/高k栅极堆叠的栅极边缘轮廓
4. Gate-first integration of Gd-based high-k dielectrics with metal gate electrodes [C] . Gottlob H.D.B., Schmidt M., Kurz H. Signals, Circuits and Systems (SCS), 2009 . 2009

机译：Gd基高k电介质与金属栅电极的栅极优先集成
5. Technology development and study of rapid thermal CVD high-k gate dielectrics and CVD metal gate electrode for future ULSI MOSFET device integration: Zirconium oxide, and hafnium oxide. [D] . Lee, Choong-Ho. 2003

机译：快速热CVD高k栅极电介质和CVD金属栅电极的技术开发和研究，用于未来的ULSI MOSFET器件集成：氧化锆和氧化ha。
6. High Performance Top-Gated Graphene Nanoribbon Transistors Using Zirconium Oxide Nanowires as High-k Gate Dielectrics [O] . Dr. Lei Liao, Jingwei Bai, Yungchen Lin, -1

机译：使用氧化锆纳米线作为高k栅极电介质的高性能顶门石墨烯纳米晶体管
7. Study on advanced gate stack using high-k dielectric and metal electrode [O] . HWANG WAN SIK 2008

机译：使用高k介电层和金属电极的先进栅堆叠的研究

Gate-first integration of Gd-based high-k dielectrics with metal gate electrodes

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