Silicon loss metrology using synchrotron x-ray reflectance and Bragg diffraction

摘要

We use synchrotron x-ray reflectometry and Bragg diffraction to study silicon loss in the low temperature plasma oxidation of silicon-on-insulator (SOI) wafers. We show that Laue oscillations associated with the Si (004) Bragg peak give the number of Si (004) planes in the device layer to within an experimental error of 0.07 nm and that X-ray reflectometry gives the total thickness of the device layer and the surface oxide to within 0.05 nm. We find that silicon loss in samples processed in two different plasma systems correspond to an increase in total thickness that is consistent with the formation of SiO{sub}2.