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Multi-Scale Modeling of Shock-Induced Failure of Polysilicon MEMS

机译:多晶硅MEMS冲击诱导失效的多规模建模

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摘要

We investigate the shock-induced stress state and possible failure mechanisms in polysilicon MEMS sensors. In case of accidental drop events, we aim at highlighting the links between drop features, like drop height and impact angles, and the location of the failing detail of the device. Taking into account the small inertial contribution of the sensor to the whole package dynamics, we adopt a decoupled multi-scale numerical approach, where macro-scale analyses (at die length-scale) are used to define the acceleration records to be adopted as loading in meso-scale (at sensor length-scale) simulations. We show that a commonly adopted indicator to assess drop severity is not able to take in due account the details of the impact event and possible very localized failures at the sensor level.
机译:我们研究了多晶硅MEMS传感器中的冲击引起的应力状态和可能的故障机制。在意外丢弃事件的情况下,我们的目的是突出显示下降特征之间的链接,如下降高度和撞击角,以及设备故障细节的位置。考虑到传感器对整个封装动态的小惯性贡献,我们采用了解耦的多尺度数值方法,其中宏观分析(在模尺度级)用于定义要采用的加速记录在中间尺度(在传感器长度级)模拟中。我们表明,常用的指标评估下降严重性无法适当考虑到影响事件的细节以及传感器级别的可能的非常本地化的故障。

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