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ANALYSIS OF COULOMB AND JOHNSEN-RAHBEK ELECTROSTATIC CHUCK PERFORMANCE FOR EUV LITHOGRAPHY

机译:EUV光刻库仑和Johnsen-Rahbek静电夹头性能分析

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摘要

The governing pressure equations for Coulomb and J-R chucks were presented, and for the nominal parameters used, the J-R chuck was capable of producing significantly higher pressures for the same applied voltage in the contact (pin) regions. Due to the J-R chuck dependence on contact to initiate charge accumulation, the J-R chuck pressure is spatially nonuniform and restricted to the contacting regions. However, due to the Coulomb chuck having a spatially uniform pressure distribution, it could cause some reticle distortion between pins. A desirable attribute of a Coulomb chuck is that the pressure is not highly dependent on gap and therefore would not change appreciably due to the presence of a particle. If relatively tall pins are required to minimize particle effects, the force in a Coulomb chuck could be significantly reduced while the pressure in a J-R chuck would change a negligible amount. However, what still needs to be determined is how a J-R chuck will perform with a particle between a pin and the backside of the reticle. Additionally, in-plane distortion of the reticle surface was not included in this study.
机译:提出了用于库仑和J-R卡盘的控制压力方程,并且对于所使用的标称参数,J-R卡盘能够在触点(引脚)区域中的相同施加电压产生明显更高的压力。由于J-R卡盘依赖接触以启动电荷累积,J-R卡盘压力在空间上不均匀并且限制在接触区域。然而,由于库仑卡盘具有空间均匀的压力分布,它可能导致销之间的一些掩模版扭曲。库仑卡盘的理想属性是压力不依赖于间隙,因此由于颗粒存在而不会明显地改变。如果需要相对高的引脚以最小化颗粒效果,则可以显着降低库仑卡盘中的力,同时J-R卡盘中的压力会改变可忽略的量。然而,仍然需要确定的是J-R卡盘如何在销和掩模版的背面之间使用粒子进行。另外,本研究中不包括掩模版表面的面内变形。

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