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Arrays of sub-100 nm features fabricated with table top extreme ultraviolet interferometric laser lithography

机译:由台式极端紫外线干涉激光光刻制造的次100 NM特性阵列

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摘要

Arrays of nano-dots were demonstrated by multiple exposure interferometric lithography using a table top λ=46.9 nm wavelength laser. Patterns of different geometries with features ~ 60 nm FWHM were printed controlling the exposure dose.
机译:通过使用台式λ= 46.9nm波长激光通过多次曝光干涉光刻证明纳米点阵列。用特性〜60nm FWHM的不同几何形状的图案被印刷控制曝光剂量。

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