首页> 外文会议>International Conference on Innovative Computing, Information and Control >A Novel Ultra Broadband 8-45 GHz 4-Bit GaAs pseudomorphic High Electron Mobility Transistors (pHEMT) Monolithic Digital Attenuator Used for Gain Control of Transceivers
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A Novel Ultra Broadband 8-45 GHz 4-Bit GaAs pseudomorphic High Electron Mobility Transistors (pHEMT) Monolithic Digital Attenuator Used for Gain Control of Transceivers

机译:一种新型超宽带8-45 GHz 4位GaAs假形高电子迁移率晶体管(PHEMT)单片数字衰减器用于收发器的增益控制

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A novel broadband, 8 to 45 GHz 4-bit MMIC digital attenuator which could be used for gain control of transceivers has been designed. The attenuator has been designed with 0.25 μm GaAs pHEMT process. Ultra broad bandwidth and high attenuation accuracy has been achieved by using different types of configurations. This attenuator has 1 dB resolution and 15 dB dynamic range. The normalized attenuation accuracy is better than 0.6 dB over all attenuation range and full 37 GHz bandwidth. The reference state insertion loss is less than 6 dB at 20 GHz. The input and output return losses of the attenuator are better than 11 dB over all attenuation states and operating frequencies.
机译:设计了一种新颖的宽带,8至45 GHz 4位MMIC数字衰减器,可用于收发器的增益控制。衰减器设计有0.25μm的GaAs Phemt工艺。通过使用不同类型的配置,实现了超广泛的带宽和高衰减精度。该衰减器具有1 dB分辨率和15 dB动态范围。归一化衰减精度超过所有衰减范围和全37 GHz带宽优于0.6 dB。参考状态插入损耗在20GHz时小于6 dB。在所有衰减状态和操作频率上,衰减器的输入和输出返回损耗优于11 dB。

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