Potentially Modulated GaAs/GaNAs/InGaAs Quantum Wells for Solar Cell Applications

摘要

We have fabricated GaAs/GaNAs and GaAs/GaNAs/InGaAs MQWs introduced into the intrinsic region of GaAs p-i-n solar cells by atomic H-assisted RF-molecular beam epitaxy. Compared to the more conventional GaAs/InGaAs MQW cells, GaAs/GaNAs/InGaAs MQW cells exhibited improved external quantum efficiencies in the low energy region. This is due to the extension of band edge into longer wavelengths as achieved by use of GaNAs materials.