Investigation of Dislocations Inducing Leakage Current on SiC Junction Barrier Schottky Diode by Two-Photon-Excited Band-Edge Photoluminescence

摘要

Tilt angles of threading dislocations (TDs) which induce leakage of current on SiC junction barrier schottky diodes (SiC-JBSs) were investigated by two-photon-excited photoluminescence (2PPL) and transmission electron microscopy (TEM). Observation of leakage spots measured by atomic force microscopy (AFM) revealed that pit-like structures were certainly formed but the depths were considerably shallow, indicating that influence of local electric field due to the structures was negligible on our SiC-JBSs. It became clear that tilt angles of the TDs inducing leakage were relatively larger than about 11° by 2PPL and that the TD was the threading mixed dislocation by TEM.