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A Predictive Model for Controlling Wafer Level Polish Rate Uniformity in Oxide CMP

机译:一种控制氧化物CMP晶片液抛光率均匀性的预测模型

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A stress based engineering model has been developed that predicts the removal rate profile across the wafer as a function of the principal and shear stresses on the wafer.The model reproduces the form of the radial variation in polish rate that is seen without back side air for the current set of consumable conditions and the changes in the polish rate profile that occur when back side air pressure is used on an IPEC-472 tool.The model which is GUI based and can be run in the fab,returns the optimum recipe setting to maximize polish rate uniformity based on the current tool performance.Implementing this model in production resulted in a 50% improvement in within wafer uniformity statistics.
机译:已经开发了一种基于应力的工程模型,其在晶片上的主要和剪切应力的函数上预测晶片上的去除速率曲线。该模型再现抛光速率径向变化的形式,这些抛光率无需背面空气在IPEC-472工具上使用时,当前的消耗条件和波兰速率曲线的变化发生在ipec-472工具上。基于GUI的模型,可以在FAB中运行,返回最佳配方设置基于当前工具性能最大化波兰速率均匀性。根据晶圆均匀性统计,实现该模型的制造模型导致了50%的改善。

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