THREE-DIMENSIONAL ALGaAs NANO-HETEROSTRUCTURES USING BOTH VLS AND MOVPE GROWTH MODES

摘要

Three dimensional(3D)nano-heterostructues can be fabricated using both the vaporliquid-solid(VLS) and metalorganic vapor phase epitaxy(MOVPE) growth modes. This technique is fundamentally a bottom-up approach and represents a new nano-technology.In the growth of AlGaAs nanowires, GaAs, AlGaAs, and AlAs wires are oriented to the [111] B direction on GaAs nanowires, GaAs, AlGaAs, and AlAs wires are in anowires capped with AlGaAs layers formed by the MOVPE growth mode.