Anomalous Low-Frequency Noise Behavior in 210 GHz SiGe HBTs

机译：210 GHz SiGE HBTS中的异常低频噪声行为

获取原文

获取外文期刊封面目录资料

页面导航

摘要
著录项
引文网络
相似文献
相关主题

摘要

We present a comprehensive study of low-frequency noise mechanisms in 210 GHz SiGe HBTs using a variety of measurement techniques, and explain a unique scaling effect. The implication of these noise mechanisms on SiGe HBT compact modeling methodologies are also discussed.

机译：我们使用各种测量技术展示了210GHz SiGe HBT中的低频噪声机制，解释了独特的缩放效果。还讨论了这些噪声机制对SiGe HBT紧凑型造型方法的影响。

著录项

来源
《Conference on Noise in Devices and Circuits》|2005年||共7页
会议地点
作者
Zhenrong Jin; Jarle A. Johansen; John D. Cressler; Alvin J. Joseph;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种
中图分类 O421.8;
关键词
flicker noise; 1/f noise; low-frequency noise; SiGe HBT; BJT;

机译：闪烁的噪音;1 / f噪声;低频噪声;SiGe HBT;BJT;

相似文献

外文文献
中文文献
专利

1. Proton response of low-frequency noise in 0.20 μm 90 GHz f_T UHV/CVD SiGe HBTs [J] . Zhenrong Jin, John D. Cressler, Guofu Niu, Solid-State Electronics . 2003,第1期

机译：0.20μm90 GHz f_T UHV / CVD SiGe HBT中低频噪声的质子响应
2. Low-Frequency Noise in Advanced SiGe:C HBTs—Part I: Analysis [J] . Chhandak Mukherjee, Thomas Jacquet, Anjan Chakravorty, IEEE Transactions on Electron Devices . 2016,第9期

机译：先进SiGe：C HBT中的低频噪声-第一部分：分析
3. Low-Frequency Noise in Advanced SiGe:C HBTs—Part II: Correlation and Modeling [J] . Chhandak Mukherjee, Thomas Jacquet, Anjan Chakravorty, IEEE Transactions on Electron Devices . 2016,第9期

机译：高级SiGe：C HBT中的低频噪声-第二部分：相关性和建模
4. Anomalous Low-Frequency Noise Behavior in 210 GHz SiGe HBTs [C] . Zhenrong Jin, Jarle A. Johansen, John D. Cressler, Noise in Devices and Circuits III . 2005

机译：210 GHz SiGe HBT中的异常低频噪声行为
5. High frequency noise modeling and microscopic noise simulation for SiGe HBT and RF CMOS. [D] . Cui, Yan. 2006

机译：SiGe HBT和RF CMOS的高频噪声建模和微观噪声仿真。
6. STEM nanoanalysis of Au/Pt/Ti-Si3N4 interfacial defects and reactions during local stress of SiGe HBTs [O] . Ali Alaeddine, Cécile Genevois, Laurence Chevalier, 2011

机译：SiGe HBT局部应力过程中Au / Pt / Ti-Si3N4界面缺陷和反应的STEM纳米分析
7. Low-frequency noise power spectrum density characterizing of SiGe HBTs [O] . Qi Peng 2006

机译：siGe HBT的低频噪声功率谱密度表征

Anomalous Low-Frequency Noise Behavior in 210 GHz SiGe HBTs

摘要

著录项

引文网络

相似文献

相关主题

期刊订阅