Total integrated scattering (TIS) along with SIMS impurity concentration measurements were utilized to study the surface morphology and impurity concentration in deposited films as a function of bath composition, current density, wafer rotational speed, and electrodeposition time. In particular, the effect of organic additives, accelerator, suppressor, and leveler was investigated. The use of levelers leads to a reduction in surface roughness. Correlation between roughness evolution and impurity concentration are made. The emphasis is-placed on the sulfur incorporation into the deposited copper film as this is thought to reflect accelerator consumption during deposition. In agreement with recent literature, when no leveler is present in the bath, sulfur inclusion is found to be dependent strongly on deposition currents but independent of agitation. With leveler, both, roughness and sulfur inclusion become agitation leveler concentration dependent. Results indicate that the present leveling mechanism leads to roughness reduction at the expense of higher accelerator consumption.
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