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Ferroelectric (Pb,Sr)TiO3 Epitaxial Thin Films on (001) MgO for Room Temperature High-Frequency Tunable Microwave Elements

机译:(001)MgO用于室温高频可调微波元件(001)MgO的铁电(PB,SR)TiO3外延薄膜

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Ferroelectric Pb0.35Sr0.65TiO3 (PSTO) thin films were grown on (001) MgO by using pulsed laser deposition. Microstructure studies from X-ray diffraction and electron microscopy indicate that the as-grown PSTO films have excellent single crystal quality and good epitaxial behavior with their c-axis oriented perpendicular to the plane of the films. The interface relationships between the PSTO films and MgO were determined to be [100]PSTO//[100]MgO and (001)PSTO//(001)MgO. The high frequency dielectric property measurements (up to 20 GHz) reveal that the as-grown films have a high dielectric constant value above 1420 and very large dielectric tunability above 38% at room temperature. These results suggest that the as-grown PSTO thin films on MgO are a good candidate for developing room-temperature high-frequency tunable microwave elements.
机译:通过使用脉冲激光沉积在(001)MgO上生长铁电PB0.35SR0.65TiO3(PSTO)薄膜。来自X射线衍射和电子显微镜的微观结构研究表明,生长的PSTO膜具有优异的单晶质量和良好的外延行为,其C轴垂直于薄膜的平面取向。 PSTO膜和MgO之间的界面关系被确定为[100] Psto // [100] MgO和(001)Psto //(001)MgO。高频电介质特性测量(最多20GHz)显示出生长的薄膜具有高于1420的高介电常数值,并且在室温下高于38%的介电可调性非常大。这些结果表明MgO上的生长PSTO薄膜是开发室温高频可调微波元件的良好候选者。

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