首页> 外文期刊>Applied Physics Letters >Ferroelectric (Pb, Sr)TiO_3 epitaxial thin films on (001) MgO for room temperature high-frequency tunable microwave elements
【24h】

Ferroelectric (Pb, Sr)TiO_3 epitaxial thin films on (001) MgO for room temperature high-frequency tunable microwave elements

机译:(001)MgO上的铁电(Pb,Sr)TiO_3外延薄膜,用于室温高频可调微波元件

获取原文
获取原文并翻译 | 示例
       

摘要

Ferroelectric Pb_(0.35)Sr_(0.65)TiO_3 (PSTO) thin films were grown on (001) MgO by using pulsed laser deposition. Microstructure studies from x-ray diffraction and electron microscopy indicate that the as-grown PSTO films have excellent single crystal quality and good epitaxial behavior with their c-axis oriented perpendicular to the plane of the films.. The interface relationships between the PSTO films and MgO were determined to be [100]_(PSTO)∥[100]_(MgO) and (001)_(PSTO)∥(001)_(MgO). The high frequency dielectric property measurements (up to 20 GHz) reveal that the as-grown films have a high dielectric constant value above 1420 and very large dielectric tunability above 34% at room temperature. These results suggest that the as-grown PSTO thin films on MgO are a good candidate for developing room-temperature high-frequency tunable microwave elements.
机译:通过使用脉冲激光沉积在(001)MgO上生长铁电Pb_(0.35)Sr_(0.65)TiO_3(PSTO)薄膜。 X射线衍射和电子显微镜的微观结构研究表明,成膜的PSTO膜具有出色的单晶质量和良好的外延性能,其c轴垂直于膜的平面。 MgO被确定为[100] _(PSTO)∥[100] _(MgO)和(001)_(PSTO)∥(001)_(MgO)。高频介电性能测量(高达20 GHz)显示,成膜后的薄膜在室温下具有高于1420的高介电常数值和高于34%的非常大的介电可调性。这些结果表明,在MgO上生长的PSTO薄膜是开发室温高频可调谐微波元件的良好选择。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号