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Thickness effect of ferroelectric domain switching in epitaxial PbTiO_(3) thin films on Pt(001)/MgO(001)

机译:外延PbTiO_(3)薄膜对Pt(001)/ MgO(001)的铁电畴转换的厚度效应

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摘要

Epitaxial PbTiO_(3) thin films of various thicknesses were prepared by pulsed laser deposition on Pt(001)/MgO(001) substrates. Their ferroelectric domain structures and switching behavior were then investigated mainly using scanning force microscopy as a function of film thickness. Direct evidence of a-domain switching was observed under an external electric field, while its contribution to the total piezoelectric response was found negligible. Thinner epitaxial PbTiO_(3) films with higher c-domain population and larger tetragonality resulted in enhanced d_(33) piezoelectric coefficients. The results suggest that the key factor determining the piezoelectric response in epitaxial ferroelectric films is not the a-to-c domain switching but apparently the population of c-domains and their tetragonality.
机译:通过脉冲激光沉积在Pt(001)/ MgO(001)衬底上制备了各种厚度的外延PbTiO_(3)薄膜。然后主要使用扫描力显微镜作为膜厚度的函数研究了它们的铁电畴结构和开关行为。在外部电场下观察到a​​域开关的直接证据,而其对总压电响应的贡献可忽略不计。具有更高的c-域人口和更大的四方性的更薄的外延PbTiO_(3)薄膜导致d_(33)压电系数提高。结果表明,决定外延铁电薄膜中压电响应的关键因素不是a-c域切换,而是c域的数量及其四方性。

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