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Effects of Deposition Temperature on the Growth Characteristics of CVD SiC Coatings

机译:沉积温度对CVD SiC涂层生长特性的影响

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The effects of deposition temperature on the growth characteristics of CVD SiC coatings were investigated. CVD SiC coatings were made by pyrolysis of methyltrichlorosilane (MTS) in hydrogen at a low pressure of 5kPa. The ratio of MTS to hydrogen was 1/12. The deposition temperatures were varied from 1373K to 1503K. Optical microscope and SEM were used to observe the surface morphology and microstructure of the coatings. XRD was used for characterization of the phase composition. Results indicated that the deposition rate and the surface roughness varied with deposition temperature. At 1373K, the deposited grains were mainly equiaxed with the crystallite size of 22 nm. However, when the deposition temperature was 1503K, the SiC grains were mainly showed faceted columnar structure with the crystallite size of 32 nm. Grain size increased with the increase of deposition temperature.
机译:研究了研究沉积温度对CVD SiC涂层生长特性的影响。 CVD SiC涂层是通过在5kPa的低压下氢解氯氯硅烷(MTS)进行的。 MTS与氢的比例为1/12。沉积温度从1373K变化到1503K。光学显微镜和SEM用于观察涂层的表面形态和微观结构。 XRD用于表征相组合物。结果表明,沉积速率和表面粗糙度随沉积温度而变化。在1373K时,沉积的晶粒主要是具有22nm的微晶尺寸。然而,当沉积温度为1503K时,SiC晶粒主要显示出刻面的柱状结构,结晶尺寸为32nm。随着沉积温度的增加而增加,粒度增加。

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