Effects of post-growth annealing treatment on the photoluminescence of ZnO nanorods

摘要

The luminescence of ZnO exhibits a band edge UV emission peak and a broad visible emission band related to the deep level defects. The mechanism of the defect related electron-hole recombination process in ZnO has been under intensively studied, and yet it remains as a controversial subject. In this work, post-growth annealing treatment was carried out to investigate the mechanism governing the visible luminescence in ZnO nanorods synthesized using a thermal chemical vapor deposition (CVD) method.