All modern photonics, fast electronics, solar energy engineering, and energy efficiency to a considerable degree are based on the application of semiconductor hetero-structures, which are crystals made by a human. Their miniaturization is undoubtedly the main challenge in the semiconductor industry. In this contribution we suggest to consider a silicon nano-hetero-junction, which consists of a minimal-size silicon quantum dot elongated in <111> direction with aspect ratio 4:3, doped with both n- and p-types of dopes simultaneously. We name it quantum egg, taking into account its shape and two-component content surrounded with a shell. It can serve a nano-scale electric diode, where one can observe all necessary attributes: charge transfer and recombination of carriers. We simulate dynamics of radiationless relaxation of electron and hole in the quantum egg after absorption of light.
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