With a high theoretical capacity of 1600 mAh g~(-1), Ge exhibits a higher diffusivity of lithium ion and a much higher electronic conductivity (400 and 10~4 times greater than those in silicon at room temperature, respectively), which endow Ge with the potential to be a promising candidate for high power rate anode materials. However, the severe pulverization triggered by drastic volume change during lithation and delithation process leads to poor cycling performance of pure Ge. In addition, Ge has received less attention among group IV elements majorly because of its high cost. Thus the realization of novel Ge based material with low content of Ge while high energy density and long cycling life is attractive but challenging.
展开▼
机译：具有1600 mAh g〜（-1）的高理论能力，GE表现出锂离子的更高扩散性，并且在室温下分别比硅的电导率高出更高的电子电导率（400和10〜4倍），其赋予其GE有可能成为高功率阳极材料的有希望的候选者。然而，在锂化和下式过程中，通过激烈的体积变化引发的严重粉碎导致纯GE的循环性能不佳。此外，由于其成本高，GE主要在第IV族元素中得到了不那么关注。因此，在高能量密度和长循环寿命的情况下实现新型GE基因材料，虽然高能量密度和长循环寿命具有吸引力但具有挑战性。
展开▼
