EXPERIMENTAL ASSESSMENT OF QUANTUM EFFECTS IN THE LOW-FREQUENCY NOISE AND RTS OF DEEP SUBMICRON MOSFETs

摘要

The down-scaling of MOSFETs brings about inversion-layer quantization. Another consequence is the enhancement of the direct tunneling current through the gate, which is a source of parasitic leakage and noise. While these effects are accounted for in the DC characteristics, so far, little attention has been paid to the impact on the low-frequency noise. In this work, the focus will be on the assessment of these quantum noise effects. It is shown that appropriate test structures are required, while more detailed information can be obtained by changing the vertical field, i.e., through a change in the bulk bias. It will also be pointed out that beside experimental data, there is a growing need for accurate noise models, which go beyond the generally accepted correlated mobility fluctuations approach.