首页> 外文会议>Conference on device and process technologies for MEMS, microelectronics, and photonics >Two-way Actuation of Bi-layer Cantilever of Nickel Titanium and Silicon Nitride Thin Films by Shape Memory Effect and Stress Relaxation
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Two-way Actuation of Bi-layer Cantilever of Nickel Titanium and Silicon Nitride Thin Films by Shape Memory Effect and Stress Relaxation

机译:通过形状记忆效应和应力松弛双向致动镍钛和氮化硅薄膜的双层悬臂

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This study analyses the two-way actuation of a bi-layer cantilever of nickel titanium (NiTi) and silicon nitride thin films. The cantilever will curl on low temperature and uncurl on high temperature. The curling mechanism results from the stress relaxation of the NiTi film and the uncurling from the shape memory effect. A NiTi film with thickness of about 3μm was deposited on a silicon substrate coated with a low-stress silicon nitride film with thickness of about 0.6 μm. The NiTi film was heat treated to recrystallise and memorise a flat shape. Over the heat treatment, residual stress built up in the NiTi film. The residual stress was measured to be around 400-800 MPa tensile by the wafer curvature method (Stoney's equation). The transformation temperatures of the NiTi film were measured to be about 36.3°C (A_p) and 32.6°C(R_p) by differential scanning calorimeter. The bi-layer cantilever was released from the silicon substrate by anisotropic wet etching (TMAH). Below R-phase finish temperature (<30°C) the shape memory effect was inactive and the NiTi film relaxed from the residual stress, which caused the cantilever to curl up. Above the austenite finish temperature (>50°C), the NiTi film uncurled toward its memorised shape because of the shape memory effect. Therefore, by cycling the temperature high and low, the cantilever uncurled and curled.
机译:该研究分析了镍钛(NITI)和氮化硅薄膜的双层悬臂的双向致动。悬臂将在高温下卷曲低温和未粗糙度。卷曲机构由NITI薄膜的应力松弛和形状记忆效应的垂直产生。沉积厚度为约3μm的Niti膜在涂有厚度为约0.6μm的低应力氮化硅膜的硅衬底上沉积在涂覆的硅衬底上。将NITI薄膜热处理以重新结晶并记住平坦的形状。在热处理中,在NITI薄膜中建立的残余应力。通过晶片曲率法(Stoney的等式)测量残余应力为约400-800MPa拉伸。通过差示扫描量热计测量Niti膜的转化温度为约36.3℃(a_p)和32.6℃(R_p)。通过各向异性湿法蚀刻(TMAH)从硅衬底释放双层悬臂。低于R相结束温度(<30°C)形状记忆效应是无活性的,并且从残余应力下放松的Niti膜,这导致悬臂卷起。高于奥氏体结束温度(> 50℃),由于形状记忆效应,NITI膜朝向其记忆形状垂直。因此,通过将温度循环高低,悬臂垂直和卷曲。

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