PLASMA-ASSISTED MBE GROWTH OF GaN ON GaN/SAPPHIRE TEMPLATES GROWN IN SITU BY AMMONIA- MBE

摘要

The characteristics of the plasma-assisted MBE and ammonia- MBE for GaN growth are studied side by side for exploring the benefits of combined use of the two techniques. It is demonstrated that ammonia-MBE grown GaN layers can be used as in situ templates for plasma-assisted MBE growth of GaN epilayers and device structures with good surface and interface quality. Such templates, both conducting and semi-insulating, offer an alternative to commercial MOCVD GaN templates commonly used for plasma-assisted MBE growth.