Au/In_2 BONDING OF InP-BASED MOEMS

摘要

Tunable laser sources for telecom applications have been widely studied during recent years. A limiting factor to their performance is the rather low heat dissipation of the deployed materials. Here, we propose a low temperature bonding process of micro-opto electro-mechanical systems to overcome this intrinsic problem and to provide at the same time the possibility to manufacture widely tunable vertical-cavity structures. The low temperature bonding is essential in order not to introduce an additional strain that will prevent the fabrication of membranes that feature bad optical interfaces. A two period InP/air-gap DBR has been bonded to a silicon substrate and has been investigated in terms of reflectance and mechanical properties. The successful fabrication indicates the potential use of this technology in the fabrication of high performance light emitting devices in the 1.55 μm wavelength range.