首页> 外文会议>The Annual Meeting of The American Ceramic Society >MICROWAVE PROPERTIES OF ACCEPTOR-DOPED BARIUM STRONTIUM TITANATE THIN FILMS FOR TUNABLE ELECTRONIC DEVICES
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MICROWAVE PROPERTIES OF ACCEPTOR-DOPED BARIUM STRONTIUM TITANATE THIN FILMS FOR TUNABLE ELECTRONIC DEVICES

机译:用于可调谐电子设备的受体掺杂钡锶锶锶锶锶的微波性能

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The influence of Mg-doping on the structure, microstructure, surface morphology, and dielectric properties of Ba{sub}(1-x)SrsTiO{sub}3 (BST) thin films is measured and analyzed. The films were fabricated on MgO substrates with the metalorganic solution deposition technique using carboxylate-alkoxide precursors and annealed at 800 °C in an oxygen atmosphere. The structure, microstructure, surface morphology, and film/substrate compositional quality were evaluated with glancing angle x-ray diffraction, field emission scanning microscopy, atomic force microscopy, and Auger electron spectroscopy studies. Dielectric properties of unpatterned films were measured at 10 GHz using a coupled and tuned split dielectric resonator system, The Mg-doped BST films exhibited improved dielectric and insulating properties compared to undoped Ba{sub}0.6Sr{sub}0.4TiO{sub}3 thin films and are candidates for integration into tunable microwave devices.
机译:测量并分析了Mg掺杂对Ba {}(1-x)SRSTIO {Sub} 3(BST)薄膜的结构,微观结构,表面形态和介电性能的影响。在MgO底物上用金属溶液沉积技术制造薄膜,使用羧酸盐 - 醇盐前体并在800℃下在氧气气氛中退火。用透明角X射线衍射,场发射扫描显微镜,原子力显微镜和螺旋钻电子光谱研究评估了结构,微观结构,表面形态和薄膜/底物组成质量。使用耦合和调谐的分离介电谐振器系统在10GHz下测量未图案化薄膜的介电性质,Mg掺杂的BST膜与未掺杂的BA {Sub} 0.4tio {Sub} 3相比,Mg掺杂的BST膜表现出改善的介电和绝缘性能。薄膜并是集成到可调微波器件中的候选者。

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