DESIGN OF MOCVD FILM GROWTH IN A HOT WALL TUBULAR REACTOR

摘要

The deposition kinetics for MOCVD film growth was investigated in a range of common process parameters during laminar flow in horizontal hot wall tubular reactor. Particular attention was paid to the relationship between growth rate and reactor dimensions as well as process temperature. The development of the modeling procedure permitted to predict growth rates and precursor concentrations at different experimental conditions. The starting point was the official modeling procedure of members of CVD project of Society of Chemical Engineers of Japan. On the other hand, details of experimental verification were given for low pressure MOCVD deposition of TiO_2 and Al_2O_3 films.