QUASI-1D CHANNELS IN Si DELTA-DOPED GaAs GROWN ON VICINAL (111)A GaAs SUBSTRATES

摘要

A novel delta-doped by Si GaAs epitaxial structures were grown by a MBE method on vicinal (111)A substrates with misorientation angles of 0.5°, 1.5°and 3°respect to the [211] direction. It was found that the resistivity of structures R_(pa) along the steps of vicinal surface is lower than that of R_(pe) across the steps and depends on temperature. The anisotipopy. of resistance is explained by quasi-1D channels or at least 1D periodic modulation of the 2D electrons in the structure. All samples showed p-type conductivity.