This paper presents the possibility of a piezoelectric micro-switch for RF application. The switches we fabricated consist of micro-cantilevers using PZT thin films with the length of 300μm and the width of 50μm. The cantilevers are actuated as unimorph actuators that can be deflected by applying voltage between upper and lower electrodes. We could obtain large deflection of 4.3μm even at the low voltage of 6.0V, which is well compatible with conventional IC drivers. This result indicates that the RF-MEMS switch using piezoelectric PZT thin films is advantageous to the low voltage switching devices compared with conventionally proposed electrostatic ones.
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