This paper presents the possibility of a piezoelectric micro-switch for RF application. The switches we fabricated consist of micro-cantilevers using PZT thin films with the length of 300 mu m and the width of 50/mu m. The cantilevers are actuated as unimorph actuators that can be deflected by applying voltage between upper and lower electrodes. We could obtain large deflection of 4.3/mu m even at the low voltage of 6.0 V, which is well compatible with conventional IC drivers. This result indicates that the RF-MEMS switch using piezoelectric PZT thin films is advantageous to the low voltage switching devices compared with conventionally proposed electrostatic ones.
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