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PIEZOELECTRIC THIN FILM, PIEZOELECTRIC MATERIAL, AND FABRICATION METHOD OF PIEZOELECTRIC THIN FILM AND PIEZOELECTRIC MATERIAL, AND PIEZOELECTRIC RESONATOR, ACTUATOR ELEMENT, AND PHYSICAL SENSOR USING PIEZOELECTRIC THIN FILM
PIEZOELECTRIC THIN FILM, PIEZOELECTRIC MATERIAL, AND FABRICATION METHOD OF PIEZOELECTRIC THIN FILM AND PIEZOELECTRIC MATERIAL, AND PIEZOELECTRIC RESONATOR, ACTUATOR ELEMENT, AND PHYSICAL SENSOR USING PIEZOELECTRIC THIN FILM
A piezoelectric thin film is provided to reduce the power consumption and miniature the RF-MEMS device using the aluminium nitrate membrane contains the scandium. An aluminium nitrate membrane contains the scandium. When the total amount of the atom number of the aluminium nitrate membrane and the scandium is 100 atom %, the inclusion rate of the scandium is in range of 0.5~50 atom %. The aluminium nitrate membrane is installed on the top of the substrate. At least one layer of the intermediate layer is installed between the aluminium nitrate membrane and the substrate.
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