首页> 外文会议>2013 IEEE International Symposium on the Applications of Ferroelectric and Workshop on the Piezoresponse Force Microscopy >Precise determination of piezoelectric longitudinal charge coefficients for piezoelectric thin films assisted by finite element modeling
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Precise determination of piezoelectric longitudinal charge coefficients for piezoelectric thin films assisted by finite element modeling

机译:有限元建模辅助精确确定压电薄膜的压电纵向电荷系数

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摘要

A determination method to identify the piezoelectric longitudinal charge coefficient d33 for thin films on substrate is presented. Finite Element (FE) simulations and measurements at PZT on bulk silicon show correlations of the substrate characteristics and electrode size subject to the displacement of an electric actuated piezoelectric material. FE models are used to identify the d33 independent of the substrate and electrode characteristic. Thereby the piezoelectric longitudinal charge coefficient of 1.1 µm PLD deposited Pb(Zr0.52Ti0.48)O3 (PZT) is calculated d33 = 272.5 pm/V and a small standard deviation of σ = 4 pm/V for different sample geometries is analyzed.
机译:提出了确定衬底上薄膜的压电纵向电荷系数d33的确定方法。在PZT上对块状硅进行的有限元(FE)模拟和测量表明,基底特性和电极尺寸与电驱动压电材料的位移有关。 FE模型用于独立于底物和电极特性来识别d33。从而计算出1.1 µm PLD沉积的Pb(Zr0.52Ti0.48)O3(PZT)的压电纵向电荷系数d33 = 272.5 pm / V,并分析了不同样品几何形状的σ= 4 pm / V的小标准偏差。

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