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Piezoelectric thin film, piezoelectric thin film element and target, and piezoelectric thin film and piezoelectric thin film element manufacturing method

机译:压电薄膜,压电薄膜元件和靶材,压电薄膜和压电薄膜元件的制造方法

摘要

Provided is a piezoelectric thin film that is unlikely to generate a heterogeneous phase and has excellent piezoelectric characteristics. A piezoelectric thin film 3 including a composition represented by the general formula: (1-n) (K1-xNax) mNbO3-nCaTiO3, wherein m, n, and x in the general formula are 0.87 ≦ m ≦ 0. 97, piezoelectric thin film 3 in the range of 0 ≦ n ≦ 0.065 and 0 ≦ x ≦ 1.
机译:提供一种压电薄膜,该压电薄膜不易产生异相,并且具有优异的压电特性。压电薄膜3,其包括由通式:(1-n)(K1-xNax)mNbO3-nCaTiO3表示的组成,其中通式中的m,n和x为0.87≤m≤0。97,压电薄膜膜3在0≤n≤0.065和0≤x≤1的范围内。

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