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PIEZOELECTRIC THIN FILM, PIEZOELECTRIC THIN FILM ELEMENT, TARGET, AND METHODS FOR PRODUCING PIEZOELECTRIC THIN FILM AND PIEZOELECTRIC THIN FILM ELEMENT
PIEZOELECTRIC THIN FILM, PIEZOELECTRIC THIN FILM ELEMENT, TARGET, AND METHODS FOR PRODUCING PIEZOELECTRIC THIN FILM AND PIEZOELECTRIC THIN FILM ELEMENT
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机译：压电薄膜，压电薄膜元件，靶材以及制备压电薄膜和压电薄膜元件的方法
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摘要
Provided is a piezoelectric thin film which exhibits excellent piezoelectric properties, and in which different phases are not readily generated. The piezoelectric thin film (3) includes a composition represented by the general formula (1-n)(K1-xNax)mNbO3-nCaTiO3. In said general formula, m, n, and x are respectively within the ranges 0.87≤m≤0.97, 0≤n≤0.065, and 0≤x≤1.
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机译：提供了一种压电薄膜，其显示出优异的压电性能，并且其中不容易产生不同的相。压电薄膜（3）包括由通式（1-n）表示的组成（K 1-x Na x ） m NbO 3 -nCaTiO 3 。在所述通式中，m，n和x分别在0.87≤m≤0.97、0≤n≤0.065和0≤x≤1的范围内。
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