首页> 外文会议>Symposium E, "Materials for high-temperature superconductor technologies" >Preparation of Ba{sub}2CuO{sub}2(CO{sub}3)mACuO{sub}2n(A=Sr,Ca) films by MBE technique
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Preparation of Ba{sub}2CuO{sub}2(CO{sub}3)mACuO{sub}2n(A=Sr,Ca) films by MBE technique

机译:通过MBE技术的BA {Sub} 2Cuo {Sub} 2(Co {Sub} 2 N(A = SR,CA)薄膜的制备

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[Ba{sub}2CuO{sub}2(CO{sub}3)]m[ACuO{sub}2]n(A=Sr) superlattices containing oxycarbonate blocks as charge reservoir have been prepared on SrTiO{sub}3 using the molecular beam epitaxy technique. First, thin films of the oxycarbonate cuprate Ba{sub}2CuO{sub}2(CO{sub}3) have been prepared on SrTiO{sub}3(001) using NO{sub}2 gas as an oxidant and CO{sub}2 gas. The films have been grown at 500°C. At higher substrate temperature or at lower CO{sub}2 pressure Ba{sub}2CuO{sub}3 was formed instead of Ba{sub}2CuO{sub}2(CO{sub}3), and the films becomes amorphous at lower temperature. X-ray diffraction and reflection high-energy electron diffraction observations indicated that (Ba{sub}xSr{sub}(1-x)){sub}2CuO{sub}2(CO{sub}3) grew along the [001] crystal orientation on SrTiO{sub}3(001) with the following epitaxial relationship: Ba{sub}2CuO{sub}2(CO{sub}3)[100]//SrTiO{sub}3[110] and Ba{sub}2CuO{sub}2(CO{sub}3)[110]//SrTiO{sub}3 [100]. Depth profile of secondary ion mass spectrometry signals indicated the incorporation of carbon into the films. Secondly, the oxycarbonate cuprates and infinite layers have been alternately stacked. It was confirmed that Ba{sub}2CuO{sub}2(CO{sub}3)was inserted between several unit cells of SrCuO{sub}2. Electrical measurements show the as grown films to have a semiconducting behavior.
机译:[巴{子} 2CuO {子​​} 2(CO {子} 3)] M [ACuO {子​​} 2] n的(A = SR)含有碳酸氧盐块作为电荷一直在使用上的SrTiO {子} 3制备贮存超晶格分子束外延技术。首先,使用NO {sub} 2气体作为氧化剂和CO {SUB,在SRTIO {Sub} 3(001)上制备氧碳酸铜铜Ba {Sub} 2(Co {Sub} 3)的薄膜。 2天然气。薄膜已在500℃下生长。在更高的基板温度或下部CO {} 2中,形成压力BA {SUB} 2CUO {SUB} 3而不是BA {SUB} 2CUO {SUB} 2(CO {SUB} 3),并且薄膜在较低时变为无定形温度。 X射线衍射和反射高能电子衍射观察结果表明(BA {Sub} XSR {Sub}(1-x)){sub} 2cuo {sub} 2(co {sub} 3)沿着[001]增长的Ba {子} 2CuO {子​​} 2(CO {子} 3)[100] // {的SrTiO子} 3 [110]和Ba {子:上的SrTiO {子} 3(001)具有以下外延关系的晶体取向2cuo {sub} 2(co {sub} 3)[110] // srtio {sub} 3 [100]。二次离子质谱信号的深度分布表明碳掺入薄膜中。其次,交替堆叠氧碳酸铜铜和无限层。确认,在SRCUO {sub} 2的若干单位单元之间插入Ba {sub} 2cuo {sub} 2(co {sub} 3)。电测量显示为生长的薄膜具有半导体行为。

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