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Surface preparation of gallium antimonide and indium antimonide for MBE growth and development of antimony alloy based devices

机译：镓锑苷酸和铟锑苷的表面制备MBE生长和锑合金基于锑的发展

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作者
Vangala, Shivashankar;
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作者单位

University of Massachusetts Lowell;

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授予单位 University of Massachusetts Lowell;
学科
学位 Ph.D.
年度 2007
页码 113 p.
总页数 113
原文格式 PDF
正文语种 eng
中图分类 AAI3288411;
关键词
Antimony; Gallium antimonide; Indium antimonide; Surface preparation;

机译：锑;镓锑酸酯;铟锑酸酯;表面处理;
入库时间 2022-08-17 12:01:16

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专利

1. Growth and characterization of indium antimonide and gallium antimonide crystals [J] . N K UDAYASHANKAR, H L BHAT Bulletin of Materials Science . 2001,第5期

机译：锑化铟和锑化镓晶体的生长和表征
2. Growth and characterization of indium antimonide and gallium antimonide crystals [J] . H L Bhat, N K Udayashankar Bulletin of materials science . 2001,第5期

机译：锑化铟和锑化镓晶体的生长和表征
3. Concerted Electrodeposition and Alloying of Antimony on Indium Electrodes for Selective Formation of Crystalline Indium Antimonide [J] . Fahrenkrug Eli, Rafson Jessica, Lancaster Mitchell, Langmuir: The ACS Journal of Surfaces and Colloids . 2017,第37期

机译：结晶铟锑酸酯选择性形成的铟电极齐齐的电沉积和合金化
4. A study of the preparation of epitaxy-ready polished surfaces of (100) Gallium Antimonide substrates demonstrating ultra-low surface defects for MBE growth [C] . Rebecca Martinez, Marius Tybjerg, Patrick Flint, Infrared Technology and Applications XLII . 2016

机译：（100）锑化镓衬底外延就绪抛光表面的制备研究表明，MBE生长具有超低表面缺陷
5. Design, Growth and Optimization of 2-micron Indium Gallium Antimonide/Aluminum Gallium Antimonide quantum well based VECSELs on Gallium Arsenide/Aluminum Gallium Arsenide DBRs. [D] . Ahirwar, Pankaj. 2013

机译：在砷化镓/砷化铝镓DBR上设计，生长和优化基于2微米铟镓铟/锑化铝镓量子阱的VECSEL。
6. Ultra-fast photodetectors based on high-mobility indium gallium antimonide nanowires [O] . Dapan Li, Changyong Lan, Arumugam Manikandan, -1

机译：基于高迁移率铟镓铟锑纳米线的超快速光电探测器
7. Czochralski growth of gallium indium antimonide alloy crystals [O] . Tsaur, S.C. 1998

机译：Czochralski生长镓铟锑合金晶体
8. Czochralski growth of gallium indium antimonide alloy crystals [R] . 1998

机译：Czochralski生长镓铟锑合金晶体

Surface preparation of gallium antimonide and indium antimonide for MBE growth and development of antimony alloy based devices

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