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Characterization of Amorphous Anodic Nb{sub}2O{sub}5 Nanofilm for Gas Sensing

机译:无定形阳极Nb {sub} 2o {sub} 5纳米丝的表征

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Amorphous Nb{sub}2O{sub}5 film of 167nm thickness was fabricated by anodic oxidation of sputter deposited niobium and characterized by TEM, GD-OES and AFM. The electric properties of the anodic films with sputter-deposited circular gold electrodes were studied by AC impedance spectroscopy in ambient gas atmospheres of air, argon, oxygen or hydrogen in the temperature range of 25 - 200°C. The amorphous Nb{sub}2O{sub}5 showed the character of n-type semiconductor. The conductivity of the film, following the Arrhenius behaviour, was independent of the oxygen partial pressure, but was largely dependent on hydrogen partial pressure. The conductivity of the Nb{sub}2O{sub}5 film at room temperature in dry hydrogen was 2.2 orders of magnitude as high as that in air. The enhanced conductivity could be associated with partial reduction of Nb{sup}(5+) in dry hydrogen atmosphere. The addition of water vapor to hydrogen atmosphere reduced conductivity probably due to suppressing the reduction of Nb{sub}2O{sub}5.
机译:无定形的Nb {子} 2O {子} 167nm厚度的5膜通过溅射沉积铌的阳极氧化制备并表征通过TEM,GD-OES和AFM。用溅射沉积的圆形的金电极的阳极氧化膜的电特性进行了研究通过在温度范围为25空气,氩气,氧气或氢气的环境气体环境交流阻抗谱 - 200℃。该无定形的Nb {子} 2O {子} 5显示n型半导体的性质。该膜的导电性,以下阿列纽斯行为,不依赖于氧分压的,但很大程度上取决于氢分压。铌{子} 2O {子}在干燥的氢气室温下5膜的导电率为大小一样高空气中的2.2订单。增强的电导率可以用在干燥的氢气氛中部分还原铌{SUP}的(5 +)相关联。加入水蒸汽氢气氛的由于抑制铌{子} 2O {子} 5的降低而降低导电性可能。

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