首页> 外国专利> ROBUST AMORPHOUS SILICON ANODES, RECHARGABLE BATTERIES HAVING AMORPHOUS SILICON ANODES, AND ASSOCIATED METHODS

ROBUST AMORPHOUS SILICON ANODES, RECHARGABLE BATTERIES HAVING AMORPHOUS SILICON ANODES, AND ASSOCIATED METHODS

机译:坚固的非晶硅阳极,具有非晶硅阳极的可充电电池以及相关方法

摘要

Amorphous silicon anode electrodes and devices for a rechargeable batteries having enhanced structural stabilities are provided. An amorphous silicon anode can include an electrically conductive substrate and an electrode layer deposited onto the substrate, where the electrode layer is comprised of one or more amorphous silicon structures, and the amorphous silicon structures have at least one dimension that is less than or equal to about 500 nm.
机译:提供了具有增强的结构稳定性的非晶硅阳极电极和用于可再充电电池的装置。非晶硅阳极可包括导电衬底和沉积在衬底上的电极层,其中电极层由一个或多个非晶硅结构组成,并且非晶硅结构具有至少一个小于或等于一维的尺寸。约500纳米。

著录项

  • 公开/公告号US2018337402A1

    专利类型

  • 公开/公告日2018-11-22

    原文格式PDF

  • 申请/专利权人 INTEL CORPORATION;

    申请/专利号US201715823451

  • 申请日2017-11-27

  • 分类号H01M4/38;H01M4/62;H01M10/052;H01M4/66;H01M4/04;H01M4/1395;H01M4/134;H01M4/02;

  • 国家 US

  • 入库时间 2022-08-21 12:05:09

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