Deposition of indium oxide films in plasma CVD

摘要

The effect of application of plasmas on the chemical vapor deposition has been investigated. The deposition of indium oxide film with acetylacetonatoindium as precursor in oxygen microwave and radio frequency plasmas was studied as an example. The deposition mechanism was studied kinetically with identification of species in the plasmas and deposits. The effect of application of plasmas on the deposition of In_2O_3 film was clarified by the comparison of the results obtained with those obtained in the thermal CVD.