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Ion-implanted amorphous silicon studied by variable coherence TEM

机译:通过可变相干温度研究的离子植入的非晶硅

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Amorphous silicon formed by ion-implantation of crystalline silicon is investigated with the use of VC-TEM (variable-coherence transmission electron microscopy). This technique is sensitive to medium-range-order structures. The results from high-energy Si implanted samples showed a striking similarity to sputtered amorphous silicon. We found that both ion-implanted and sputtered samples have paracrystalline structures, rather than the expected continuous random network (CRN). We also observed the structural relaxation of the ion4mplanted amorphous silicon after ex-situ thermal annealing towards the random network. The more disordered structures are favored and a large heat of relaxation is released as the temperature increases. Finally, we show some preliminary results on the structural variation with the sample depth.
机译:通过使用VC-TEM(可变相干透射电子显微镜)研究通过离子植入结晶硅形成的非晶硅。该技术对中距离阶层结构敏感。高能量Si植入样品的结果显示出溅射的无定形硅的显着相似性。我们发现,两种离子植入和溅射的样品都具有蜕皮结构,而不是预期的连续随机网络(CRN)。我们还观察到离子4普通的非晶硅在朝向随机网络朝向随机网络后的结构松弛。随着温度升高,释放越来越多的结构是有利的,并且随着温度的增加而释放大的弛豫热量。最后,我们对样品深度的结构变化显示了一些初步结果。

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