Integrated photoreeeivers with MSM and PIN photodetectors for high frequency applications

摘要

The results of investigation of PIN and MSM photodetectors fabricated in our Semiconductor Device Laboratory are presented. Discrete chips of PIN and MSM photodetectors and similar photodetectors integrated with a MESFET amplifier within a single MMIC chip were tested and compared. The structures were designed for range of wavelengths from 870nm to l000nm. To accomplish this, the In_xGa_(1-x)As absorption layer with appropriate content of indium has been used as an active layer. AH structures have been fabricated using Metal Organic Vapour Phase Epitaxy (MOVPE) growth on GaAs substrates with the use of different buffer and matching layer configuration. I-V and spectral characteristics of the PIN and MSM photodetectors and also MMIC structures with the MSM photodetector were evaluated. Time response to the optical pulse excitation has been measured. All designs were compared from the point of view of their application in the optoelectronic integrated circuits.