GaAlAs/GaAs planar photoconductors and MSM photodetectors monolithically integrated with HIGFETs: application for optical clock distribution

摘要

III-V integrated circuits associating on one hand a photoconductive detector and on the other hand an MSM photodetector with HIGFETs for optical clock distribution are presented. First, static and dynamic properties of these planar photodetectors are studied, taking into account the main characteristics of their structures (ion implantation for photoconductive detectors and Al/sub x/Ga/sub 1-x/As upper layer with x=0.45 for MSM photodetectors). Secondly, their integration with a III-V digital IC is reported. This IC includes a divider by two and its operation has been investigated up to 1.2 GHz.