Electrical and photoelectrical behaviour of Au/n-CdTe junctions

机译：AU / N-CDTE结的电气和光电行为

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The electrical and photoelectrical behaviour of Au/n-CdTe junctions prepared on CdTe monocrystalline substrates were studied. Both properties depended strongly on the parameters of the compensated high-resistive layer at the CdTe surface formed by annealing in air during preparation.

机译：研究了在CdTe单晶衬底上制备的Au / n-cdte结的电气和光电行为。这两种性质强烈依赖于通过在制备期间通过在空气中进行退火而形成的CDTE表面的补偿高电阻层的参数。

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《International conference on soild state crystals: Epilayers and heterostructures in optoelectronics and semiconductor technology》|2001年||共4页
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B. Podoer; P. P. Horley; L. Dozsa; K. S. Ulyanitsky; J Balazs; P. M. Gorley; Vo Van Tuyen; M. V. Demych; I. Reti; V. P. Makhniy; Zs. J. Horvath;
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中图分类光电子技术、激光技术;
关键词
CdTe; photorespons.; C-V; I-V; schottky;

机译：CDTE;光镜头。;C-V;I-V;肖特基;

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Electrical and photoelectrical behaviour of Au/n-CdTe junctions

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