Effects of Hf Sources, Oxidizing Agents, and NH{sub}3 Radicals on Properties of HfAlO{sub}x Films Prepared by Atomic Layer Deposition

摘要

The International Technology Roadmap for Semicon -ductors (ITRS) 2002 Update predicted that the technology node of the mass production would reach 65nm in 2007 and that high-k materials would be indispensable for the gate dielectric of CMOSFETs, especially for low power applications, because conventional SiO{sub}2 or SiON could not meet the gate leakage current specifications. HfO{sub}2 and its aluminate or silicate films have been studied as candidates because of their moderately high dielectric constants and thermal stability in contact with silicon.