Electrodeposition of copper onto Si(111) with controlled surface structure

摘要

The deposition of copper on n-Si(111) with controlled surface structure from 1 mM CuSO_4 + 0.1 M H_2SO_4 (pH = 1) solution has been studied. Silicon surfaces with different morphology were prepared by resistive annealing of miscut Si(111) wafers under ultra high vacuum. Ex situ AFM imaging of copper deposition on the annealed surfaces revealed that the copper cluster density is higher in regions of high step density and that nucleation occurs preferentially at step edges.