STI Mechanical-Stress Induced Subthreshold Kink Effect of 40nm PD SOI NMOS Device

摘要

The mechanical stress induced by STI may affect the performance of CMOS devices [1]. Mechanical stress may change work function, effective mass, carrier mobility and junction leakage, etc [2]. Until now no paper reports the STI-induced mechanical stress effect on the kink behavior of PD SOI CMOS devices. For nanometer-regime PD SOI CMOS devices, the S/D region may be very small-the influence of the STI-induced mechanical stress cannot be neglected. In this paper, the influence of STI-induced mechanical stress in the subthrehsold kink behavior of a 40nm PD SOI NMOS device is reported.