首页> 外文会议>Symposium on self-organized processes in semiconductor alloys >X-ray and tem studies of short-range order in Al{sub}(1-x)In{sub}xAs thin films
【24h】

X-ray and tem studies of short-range order in Al{sub}(1-x)In{sub}xAs thin films

机译:在{sub} XAS薄膜中的Al {Sub}(1-x)中的短距顺序的X射线和TEM研究

获取原文

摘要

X-ray scattering and transmission electron microscopy (TEM) have been used to study short-range order in Al{sub}(1-x)In{sub}xAs thin films grown by molecular beam epitaxy. Two samples grown on (001) InP at temperatures of 370°C and 400°C are characterized. The first exhibits simultaneous triple-period-A and CuPt-A short-range order with a rather short correlation range of about 2.4 nm normal to the (111) planes. Within these (individual) planes the concentration, however, is uniform over a considerably greater distance - about 6 to 9 nm - leading to a highly anisotropic scattering. This observation of triple-period short-range ordering in a sample that exhibits 2×1 surface reconstruction during growth is unexpected. We also report on the first observation of the coexistence of triple-period-A and CuPt-B short-range order. The diffuse scattering exhibits significant intensity anomalies that we attribute to atomic displacements associated with the short-range order. The second sample exhibits CuPt-B short-range ordering with scattering that is significantly streaked, suggestive of lamellar-shaped ordered domains. This sample also exhibits intensity anomalies that must be associated with atomic displacements. The first sample contains a high density of twin lamellae, while both samples contain high densities of stacking faults leading to additional narrow streaking along symmetry-allowed <111> directions. These growth faults most likely arise from the relatively low growth temperatures.
机译:X射线散射和透射电子显微镜(TEM)已经被用于研究以Al {子}(1-X)在{子} XAS薄膜通过分子束外延生长短程有序。在370℃和400℃的温度下生长在(001)的InP两个样本的特征。第一展品同时三周期-A和C​​UPT-A短程有序与约2.4纳米正常的(111)面相当短的相关范围。在这些(个体)平面中的浓度,但是,是在相当更大的距离均匀 - 约6至9纳米 - 导致高度各向异性散射。此样品中的三周期短程有序的观察,即在生长期间表现出2×1表面重建是出乎意料的。我们还对三段-A的共存和CUPT-B短程有序的第一个观察报告。漫散射呈现显著强度的异常,我们归因于与所述短程有序关联原子位移。第二样品表现出与散射即显著划线,层状形有序的域的暗示CUPT-B短程有序。该样品还显示出必须与原子位移相关联强度的异常。所述第一样品含有双薄片的有高密度,而这两个样品含有堆垛层错的高密度导致沿着对称允许的<111>方向的附加窄条纹。这些生长断层从相对较低的生长温度最有可能出现的。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号